Title:
位相シフトフォトリソグラフィックマスクのための光学的近接補正
Document Type and Number:
Japanese Patent JP4909495
Kind Code:
B2
Abstract:
A method for producing a computer readable definition of photolithographic mask used to define a target pattern is provided. The phase shift mask patterns include phase shift windows, and the trim mask patterns include trim shapes, which have boundaries defined by such sets of line segments. For a particular pair of phase shift windows used to define a target feature in a target pattern, each of the phase shift windows in the pair can be considered to have a boundary that includes at least one line segment that abuts the target feature. Likewise, a complementary trim shape used in definition of the target feature, for example by including a transmissive region used to clear an unwanted phase transition between the particular pair of phase shift windows, includes at least one line segment that can be considered to abut the target feature. Proximity correction is provided by adjusting the position of the at least one line segment on the boundary of a phase shift windows in said pair which abuts the target feature, and by adjusting the position of the at least one line segment on the boundary of the complementary trim shape which abuts the target feature.
Inventors:
Piera christophe
Coat michel luk
Coat michel luk
Application Number:
JP2003504163A
Publication Date:
April 04, 2012
Filing Date:
June 07, 2002
Export Citation:
Assignee:
SYN0PSYS, INC.
International Classes:
G03F1/68; G03C5/00; G03F1/30; G03F7/20; G03F9/00; G06F17/50; H01L21/027; G03F1/36; G03F
Domestic Patent References:
| JP2000258892A |
Foreign References:
| EP1152289A1 |
Other References:
KIKUCHI K,Method of expanding process window for the double exposure technique with alt-PSMs,PROCEEDINGS OF THE SPIE,米国,2000年3月1日,V4000,P121-131
Attorney, Agent or Firm:
Sadao Kumakura
Fumiaki Otsuka
Takaki Nishijima
Hiroyuki Suda
Hiroshi Uesugi
Nobuhiko Suzuki
Fumiaki Otsuka
Takaki Nishijima
Hiroyuki Suda
Hiroshi Uesugi
Nobuhiko Suzuki