Title:
急激な金属-絶縁体転移素子及びその製造方法
Document Type and Number:
Japanese Patent JP4920596
Kind Code:
B2
Abstract:
The abrupt metal-insulator transition device includes: an abrupt metal insulator transition material layer including an energy gap of less than or equal to 2 eV and holes within a hole level; and two electrodes contacting the abrupt metal-insulator transition material layer. Here, each of the two electrodes is formed by thermally treating a stack layer of a first layer formed on the abrupt metal-insulator transition material layer and comprising Ni or Cr, a second layer formed on the first layer and comprising In, a third layer formed on the second layer and comprising Mo or W, and a fourth layer formed on the third layer and comprising Au.
Inventors:
Yeon, Do-Heb
Kim, Hyun-Tak
Choi, Byung-kyu
Men, Sun-Ryul
Kwan, Kwon-Young
Kim, Hyun-Tak
Choi, Byung-kyu
Men, Sun-Ryul
Kwan, Kwon-Young
Application Number:
JP2007544274A
Publication Date:
April 18, 2012
Filing Date:
December 05, 2005
Export Citation:
Assignee:
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
International Classes:
H01L49/00; H01L29/786; H01L45/00; H01L49/02
Domestic Patent References:
| JP541551A | ||||
| JP200632898A | ||||
| JP2003101018A |
Attorney, Agent or Firm:
Kenji Yoshitake
Hidetoshi Tachibana
Yasukazu Sato
Hiroshi Yoshimoto
Yasushi Kawasaki
Takeshi Sekine
Hidetoshi Tachibana
Yasukazu Sato
Hiroshi Yoshimoto
Yasushi Kawasaki
Takeshi Sekine