Title:
ラテラル結晶化のための方法
Document Type and Number:
Japanese Patent JP4931102
Kind Code:
B2
Abstract:
A process of lateral crystallization is provided for increasing the lateral growth length (LGL). A localized region of the substrate is heated for a short period of time. While the localized region of the substrate is still heated, a silicon film overlying the substrate is irradiated to anneal the silicon film to crystallize a portion of the silicon film in thermal contact with the heated substrate region. A CO2 laser may be used as a heat source to heat the substrate, while a UV laser or a visible spectrum laser is used to irradiate and crystallize the film.
Inventors:
Apostro Stee. Bootsus
Robert S. Spocil
Mark A. Crowder
Robert S. Spocil
Mark A. Crowder
Application Number:
JP2004329838A
Publication Date:
May 16, 2012
Filing Date:
November 12, 2004
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L21/20; C30B1/00; C30B13/00; C30B13/24; C30B29/06; H01L21/77; H01L21/84
Domestic Patent References:
| JP11307450A | ||||
| JP2002217125A | ||||
| JP2001274088A | ||||
| JP6345415A | ||||
| JP2005109302A |
Attorney, Agent or Firm:
Hidesaku Yamamoto
Takaaki Yasumura
Takeshi Oshio
Takaaki Yasumura
Takeshi Oshio