Title:
窒化物半導体素子の製造方法。
Document Type and Number:
Japanese Patent JP4932292
Kind Code:
B2
Inventors:
Urashima Yasuto
Application Number:
JP2006080007A
Publication Date:
May 16, 2012
Filing Date:
March 23, 2006
Export Citation:
Assignee:
SHOWA DENKO K.K.
International Classes:
H01L21/66; H01L33/12; H01L33/32
Domestic Patent References:
| JP9330967A | ||||
| JP2005197289A | ||||
| JP2004327655A | ||||
| JP10144989A | ||||
| JP2000188285A |
Attorney, Agent or Firm:
Yukio Uchida
Minoru Terada
Minoru Terada