Title:
半導体発光素子およびそれを用いた照明装置
Document Type and Number:
Japanese Patent JP4997621
Kind Code:
B2
Abstract:
The semiconductor light emitting device of the present invention comprises an n-type nitride semiconductor layer 3 formed on one surface side of a single-crystal substrate 1 for epitaxial growth through a first buffer layer 2, an emission layer 5 formed on a surface side of the n-type nitride semiconductor layer 3, and a p-type nitride semiconductor layer 6 formed on a surface side of the emission layer 5. The emission layer 5 has an AlGalnN quantum well structure, and a second buffer layer 4 having the same composition as a barrier layer 5a of the emission layer 5 is provided between the n-type nitride semiconductor layer 3 and the emission layer 5. In the semiconductor light emitting device, it is possible to increase emission intensity of the ultraviolet radiation as compared with a conventional configuration while using AlGalnN as a material of the emission layer.
Inventors:
Takayoshi Takano
Yukihiro Kondo
Junji Ikeda
Hideki Hirayama
Yukihiro Kondo
Junji Ikeda
Hideki Hirayama
Application Number:
JP2005256826A
Publication Date:
August 08, 2012
Filing Date:
September 05, 2005
Export Citation:
Assignee:
Panasonic Corporation
RIKEN
RIKEN
International Classes:
H01L33/06; H01L33/32; H01L33/12; H01L33/22
Domestic Patent References:
| JP2004134787A | ||||
| JP2003078163A | ||||
| JP2003309071A | ||||
| JP2005085932A | ||||
| JP2003037338A | ||||
| JP2004179532A |
Attorney, Agent or Firm:
Keisei Nishikawa