Title:
ダブルパターン形成方法
Document Type and Number:
Japanese Patent JP5007827
Kind Code:
B2
Abstract:
Double patterns are formed by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a positive resist pattern, treating the positive resist pattern to be alkali soluble and solvent resistant, coating a negative resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a negative resist pattern. The last development step includes the reversal transfer step of dissolving away the positive resist pattern which has been converted to be soluble in developer.
Inventors:
Katsuya Takemura
Jun Hatakeyama
Kazumi Noda
Mutsuko Nakajima
Masaki Ohashi
Toshinobu Ishihara
Jun Hatakeyama
Kazumi Noda
Mutsuko Nakajima
Masaki Ohashi
Toshinobu Ishihara
Application Number:
JP2008098024A
Publication Date:
August 22, 2012
Filing Date:
April 04, 2008
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
G03F7/038; G03F7/40; G03F7/039; H01L21/027
Domestic Patent References:
| JP2009217250A | ||||
| JP2009063989A | ||||
| JP2009175660A | ||||
| JP2008078220A | ||||
| JP2006145788A | ||||
| JP2004252467A |
Attorney, Agent or Firm:
Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa