Title:
窒化物半導体発光素子及び窒化物半導体発光素子製造方法
Document Type and Number:
Japanese Patent JP5016808
Kind Code:
B2
Abstract:
Provided are a nitride semiconductor light emitting element which does not suffer a damage on a light emitting region and has a high luminance without deterioration, even though the nitride semiconductor light emitting element is one in which electrodes are disposed opposite to each other and an isolation trench for chip separation and laser lift-off is formed by etching; and a manufacturing method thereof. An n-type nitride semiconductor layer 2 has a step formed in a position beyond an active layer 3 when viewed from a p side. Up to the position of this step A, a protective insulating film 6 covers a part of the n-type nitride semiconductor layer 2, the active layer 3, a p-type nitride semiconductor layer 4, the side of a p electrode 5 and a part of the top side of the p electrode 5. The use of a structure having a chip side face covered with the protective insulating film 6 prevents the active layer or the like from being exposed to an etching gas for a long time when an isolation trench for chip separation or laser lift-off is formed by etching.
Inventors:
Ken Nakahara
Atsushi Yamaguchi
Atsushi Yamaguchi
Application Number:
JP2005324000A
Publication Date:
September 05, 2012
Filing Date:
November 08, 2005
Export Citation:
Assignee:
ROHM Co., Ltd.
International Classes:
H01L33/06; H01L33/46; H01L33/32; H01L33/44
Domestic Patent References:
| JP2005045054A | ||||
| JP2005209852A |
Foreign References:
| WO2003034508A1 |
Attorney, Agent or Firm:
Hidekazu Miyoshi
Keishin Terayama
Hiroyuki Miyoshi
Ichitaro Ito
Keishin Terayama
Hiroyuki Miyoshi
Ichitaro Ito