Title:
半導体装置の製造方法及び製造装置
Document Type and Number:
Japanese Patent JP5022116
Kind Code:
B2
Abstract:
An object to provide an insulating film for a semiconductor device, which has characteristics of low permittivity, a low leak current, and high mechanical strength, undergoes small time-dependent change of these characteristics, and has excellent water resistance, and to provide a manufacturing apparatus of the same, and a manufacturing method of the semiconductor device using the insulating film. The production process comprises a film forming step of supplying a mixed gas containing a carrier gas and a raw material gas, which is a gasified material having borazine skeletal molecules, into a chamber, causing the mixed gas to be in a plasma state, applying a bias to the substrate placed in the chamber, and carrying out gas-phase polymerization by using the borazine skeletal molecule as a fundamental unit so as to form the insulating film on the substrate; and a reaction promoting step of, after the film forming step, bringing the bias applied to the substrate to a different magnitude from the bias in the film forming step, supplying the mixed gas while gradually reducing only the raw material gas, which is the gasified material having the borazine skeletal molecules, treating the insulating film with a plasma mainly comprising the carrier gas.
Inventors:
Toshito Fujiwara
Toshihiko Nishimori
Toshiya Watanabe
Naoki Yasuda
Shinji Eiji
Teruhiko Kumada
Chiho Mizushima
Takuya Kamiyama
Tetsuya Yamamoto
Toshihiko Nishimori
Toshiya Watanabe
Naoki Yasuda
Shinji Eiji
Teruhiko Kumada
Chiho Mizushima
Takuya Kamiyama
Tetsuya Yamamoto
Application Number:
JP2007159739A
Publication Date:
September 12, 2012
Filing Date:
June 18, 2007
Export Citation:
Assignee:
MITSUBISHI HEAVY INDUSTRIES,LTD.
Mitsubishi Electric Corporation
Nippon Shokubai Co., Ltd.
Mitsubishi Electric Corporation
Nippon Shokubai Co., Ltd.
International Classes:
H01L21/318; C23C14/12; H01L21/312; H01L21/768; H01L23/522
Domestic Patent References:
| JP3778164B2 | ||||
| JP2001015496A | ||||
| JP2007324536A |
Foreign References:
| WO2006043432A1 |
Other References:
MONTERO I, GALAN L, OSORIO S P, MARTINEZ-DUART J M (Univ. Autonoma, Madrid, ESP), PERRIERE J (Groupe de Physique des Solides, Univ. Paris VI-VII, Paris, FRA),Structural Properties of BN Thin Films obtained by Plasma-enhanced Chemical Vapour Deposition.,Surf Interface Anal ,英国,1994年,Vol.21 No.11,Page.809-813
KANE W F, COHEN S A, HUMMEL J P, LUTHER B (IBM Res. Div., New York, USA), BEACH D B (Oak Ridge National Lab., Tennessee, USA) ,Use of SiBN and SiBON Films Prepared by Plasma Enhanced Chemical Vapor Deposition from Borazine as Interconnection Dielectrics,J Electrochem Soc,米国,1997年 2月,Vol.144 No.2,Page.658-663
KANE W F, COHEN S A, HUMMEL J P, LUTHER B (IBM Res. Div., New York, USA), BEACH D B (Oak Ridge National Lab., Tennessee, USA) ,Use of SiBN and SiBON Films Prepared by Plasma Enhanced Chemical Vapor Deposition from Borazine as Interconnection Dielectrics,J Electrochem Soc,米国,1997年 2月,Vol.144 No.2,Page.658-663
Attorney, Agent or Firm:
Toshiro Mitsuishi
Tadahiro Mitsuishi
Yasuyuki Tanaka
Hiroshi Matsumoto
Tadahiro Mitsuishi
Yasuyuki Tanaka
Hiroshi Matsumoto