To contrive a reduction in 1/f noise due to an amplifier transistor constituting a pixel, as the miniaturization of a MOS type image sensor advances.

A solid-state imaging apparatus includes the arrangement of unit pixels including a photoelectric conversion element and an amplifier transistor for amplifying signals according to the electric charge obtained through photoelectric conversion by the photoelectric conversion element and outputting them. The channel region of the amplifier transistor is formed away from an element isolation region, and/or the channel region of the amplifier transistor has a plurality of channel regions, i.e. at least two kinds of channel regions that are a first channel region and a second channel region.

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