Title:
半導体装置の製造方法および半導体装置の製造装置
Document Type and Number:
Japanese Patent JP5057647
Kind Code:
B2
Abstract:
In a semiconductor device manufacturing method, an etching mask (75b) having a predetermined opening pattern is formed on an etching target film (74) disposed on a target object. Then, an etching process is performed on the etching target film (74) through the opening pattern of the etching mask (75b) within a first process chamber, thereby forming a groove or hole (78a) in the etching target film. Then, the target object treated by the etching process is transferred from the first process chamber to a second process chamber, within a vacuum atmosphere. Then, a silylation process is performed on a side surface of the groove or hole (78a), which is an exposed portion of the etching target film (74), within the second process chamber.
Inventors:
Satoru Shimura
Kazuhiro Kubota
Ryuichi Asako
Takayama Seiichi
Kazuhiro Kubota
Ryuichi Asako
Takayama Seiichi
Application Number:
JP2004358609A
Publication Date:
October 24, 2012
Filing Date:
December 10, 2004
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/768; H01L21/3065
Domestic Patent References:
| JP2001118842A | ||||
| JP2003092287A | ||||
| JP2001185547A | ||||
| JP2000188331A | ||||
| JP2003282698A | ||||
| JP10265975A | ||||
| JP2000031081A | ||||
| JP4302424A | ||||
| JP2001168192A | ||||
| JP2002093683A |
Attorney, Agent or Firm:
Hiroshi Takayama