Title:
結晶シリコン薄膜の製造方法
Document Type and Number:
Japanese Patent JP5065896
Kind Code:
B2
Abstract:
The invention is a method for the production of a silicon foil with a targeted charge carrier transport to the p-n transition by means of an integral electric field ('drift field'). By varying the crystal growth speed and introducing a doping substance into the fluid silicon beforehand, a crystallization process can be carried out in such a way that a gradient over the foil thickness is produced in the doping profile in the silicon. This gradient of the doping profile gives rise to an electric field. With the aid of various foil casting techniques foils that are suitable for the production of solar cells can thus be produced in a relatively simple manner.
Inventors:
Shownecker Axel Georg
Application Number:
JP2007527076A
Publication Date:
November 07, 2012
Filing Date:
June 10, 2005
Export Citation:
Assignee:
RGS Development B.V.
International Classes:
H01L31/04; H01L31/0288; H01L31/18
Domestic Patent References:
| JP63199049A | ||||
| JP11054775A | ||||
| JP55126351A | ||||
| JP57132372A | ||||
| JP61275119A | ||||
| JP2018314A | ||||
| JP4342411A | ||||
| JP5043216A | ||||
| JP6283742A |
Other References:
BELL R O,EIGHTEENTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE,米国,IEEE,1985年10月21日,V1 CONF 18,P764-769
Attorney, Agent or Firm:
Masaki Hirota