Title:
半導体装置の製造方法及び製造装置
Document Type and Number:
Japanese Patent JP5070702
Kind Code:
B2
Abstract:
An underlying film forming section forming an underlying film on a semiconductor substrate is provided to an apparatus of fabricating a semiconductor device. The apparatus is further provided with a cooling section cooling the semiconductor substrate and a plasma nitriding section introducing active nitrogen into the underlying film while keeping the temperature of the semiconductor substrate cooled by the cooling section at 100° C. or below. The semiconductor substrate is cooled by using liquid nitrogen or liquid helium, and by cooling a stage on which the semiconductor substrate is placed.
Inventors:
Moriaki Hori
Application Number:
JP2006011603A
Publication Date:
November 14, 2012
Filing Date:
January 19, 2006
Export Citation:
Assignee:
Fujitsu Semiconductor Limited
International Classes:
H01L21/336; H01L21/318; H01L29/78
Domestic Patent References:
| JP2005530344A | ||||
| JP2005223309A | ||||
| JP2003142482A |
Attorney, Agent or Firm:
Takayoshi Kokubun