To solve such problems that a potential applied to a gate electrode of a driving transistor according to an on/off state of a light-emitting element fluctuates by influences of noise or a leak current from a selection transistor and that the driving transistor malfunctions without being capable of keeping a normal on/off state.

The semiconductor device includes: a first transistor in which a gate is connected to a data line and a first terminal is connected to a power source line; a second transistor in which a gate is connected to a first scan line, and a first terminal is connected to a second terminal of the first transistor; a memory circuit connected to a second terminal of the second transistor and to a second scan line; a third transistor; and a light-emitting element connected to a first terminal of the third transistor. The memory circuit holds a first potential inputted from the power source line or a second potential inputted from the second scan line, and applies the potential to a gate of the third transistor to control light emission of the light-emitting element.

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