Title:
絶縁薄膜上にナノ構造体を含むヘイズノイズ標準の製造方法
Document Type and Number:
Japanese Patent JP5090683
Kind Code:
B2
Abstract:
Production of a diffused background noise standard device comprises : (a) formation of an insulating layer (202) of germs of a first semiconductor material by chemical deposition from a first gas precursor; (b) formation on the insulating layer of nanostructures (2141 to 2145) with a base of a second semiconductor material and from stable germs of the first semiconductor material, by chemical deposition from a second gas precursor in the form of half spheres. Independent claims are also included for : (a) a diffused background noise standard device thus obtained; (b) a method for standardizing an apparatus for exploiting and/or measuring diffused background noise (haze).
Inventors:
Emmanuel Noro
Application Number:
JP2006200027A
Publication Date:
December 05, 2012
Filing Date:
July 21, 2006
Export Citation:
Assignee:
INSERM(INSTITUT NATIONAL DE LA SANTE ET DE LA RECHERCHE MEDICALE)
International Classes:
G01N1/00; B82B1/00; B82B3/00; C23C16/455; G01N21/956; H01L21/66; G01B11/30
Domestic Patent References:
| JP2004179658A | ||||
| JP2003240723A | ||||
| JP2000510290A | ||||
| JP9152324A | ||||
| JP63144242A | ||||
| JP2005527685A | ||||
| JP2042742A | ||||
| JP2002039921A |
Foreign References:
| US5198869 | ||||
| US4636073 | ||||
| US5004340 | ||||
| US5383018 |
Attorney, Agent or Firm:
Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro