Title:
半導体装置
Document Type and Number:
Japanese Patent JP5093934
Kind Code:
B1
Abstract:
It is an object to provide a semiconductor device with a novel structure. The semiconductor device includes memory cells connected to each other in series and a capacitor. One of the memory cells includes a first transistor connected to a bit line and a source line, a second transistor connected to a signal line and a word line, and a capacitor connected to the word line. The second transistor includes an oxide semiconductor layer. A gate electrode of the first transistor, one of a source electrode and a drain electrode of the second transistor, and one electrode of the capacitor are connected to one another.
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Inventors:
Shunpei Yamazaki
Jun Koyama
Kiyoshi Kato
Jun Koyama
Kiyoshi Kato
Application Number:
JP2012158200A
Publication Date:
December 12, 2012
Filing Date:
July 16, 2012
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/8242; G11C11/405; G11C14/00; H01L27/105; H01L27/108
Domestic Patent References:
| JP1255269A | ||||
| JP254572A | ||||
| JP2009164393A | ||||
| JP200916844A | ||||
| JP20094787A | ||||
| JP2000156472A |