Title:
極端紫外光源装置
Document Type and Number:
Japanese Patent JP5098019
Kind Code:
B2
Abstract:
A method for cleaning an optical element of an extreme ultraviolet light source device for removing, from the optical element in a chamber, scattered matter generated together with extreme ultraviolet light by plasma formed through laser beam excitation of a target in the chamber, the method which comprises: making the scattered matter generated by the plasma no larger than nanosize by using solid tin as the target and using a CO2 laser as an excitation source of the solid tin; and imparting, to the scattered matter no larger than the nanosize adhered to the optical element, an effect of overcoming the adherence of the scattered matter.
More Like This:
Inventors:
Masato Moriya
Nohshi Ueno
Abe Tamotsu
Akira Sumitani
Nohshi Ueno
Abe Tamotsu
Akira Sumitani
Application Number:
JP2007119110A
Publication Date:
December 12, 2012
Filing Date:
April 27, 2007
Export Citation:
Assignee:
Gigaphoton Co., Ltd.
International Classes:
H01L21/027; G21K1/06
Domestic Patent References:
JP11297595A | ||||
JP10064864A | ||||
JP2001133597A | ||||
JP2004207740A | ||||
JP2004213993A | ||||
JP2004214013A | ||||
JP2005072404A | ||||
JP2005166970A | ||||
JP2005197081A | ||||
JP2005235959A | ||||
JP2006529057A | ||||
JP2007013054A | ||||
JP2007134168A | ||||
JP2007281320A | ||||
JP2008098081A | ||||
JP2008204815A | ||||
JP2008532231A | ||||
JP2009500795A |
Foreign References:
WO2005022616A1 | ||||
WO2006093781A1 |
Other References:
Yoshifumi Ueno, et al.,Characterization of various Sn targets with respect to debris and fast ion generation,Proceedings of SPIE,2007年 3月,Vol.6517,pp.65173B
A. Endo, et al.,Laser produced EUV light source development for HVM,Proceedings of SPIE Emerging Lithographic Technologies XI (Proceedings Volume),2007年 3月19日,Vol.6517,pp.65170O
高橋昭彦, 他,CO2レーザ生成プラズマの極端紫外発光特性,電気学会論文誌C,2007年 2月 1日,Vol.127, No.2,,pp.155-159
藤岡慎介,他,次世代リソグラフィー光源としての最少質量EUV放射プラズマの開発,プラズマ・核融合学会誌,2006年 9月25日,Vol.82, No.9,pp.609-616
Shinsuke Fujioka, et al.,Properties of EUV and particle generations from laser-irradiated solid- and low-density tin targets,Proceedings of SPIE,2005年 3月 3日,Vol.5751,pp.578-587
H. TANAKA, et al.,Development of a target for laser-produced plasma EUV light source using Sn nano-particles,Applied Physics A,2004年,Vol.79,pp.1493-1495
A. Endo, et al.,Laser produced EUV light source development for HVM,Proceedings of SPIE Emerging Lithographic Technologies XI (Proceedings Volume),2007年 3月19日,Vol.6517,pp.65170O
高橋昭彦, 他,CO2レーザ生成プラズマの極端紫外発光特性,電気学会論文誌C,2007年 2月 1日,Vol.127, No.2,,pp.155-159
藤岡慎介,他,次世代リソグラフィー光源としての最少質量EUV放射プラズマの開発,プラズマ・核融合学会誌,2006年 9月25日,Vol.82, No.9,pp.609-616
Shinsuke Fujioka, et al.,Properties of EUV and particle generations from laser-irradiated solid- and low-density tin targets,Proceedings of SPIE,2005年 3月 3日,Vol.5751,pp.578-587
H. TANAKA, et al.,Development of a target for laser-produced plasma EUV light source using Sn nano-particles,Applied Physics A,2004年,Vol.79,pp.1493-1495
Attorney, Agent or Firm:
Takahisa Kimura
Yoshiyuki Obata
Yoshiyuki Obata