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Title:
III族窒化物半導体基板及びその製造方法
Document Type and Number:
Japanese Patent JP5271489
Kind Code:
B2
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Inventors:
Toshiharu Matsueda
Tomohiro Kobayashi
Application Number:
JP2006270353A
Publication Date:
August 21, 2013
Filing Date:
October 02, 2006
Export Citation:
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Assignee:
Furukawa Metal Co., Ltd.
International Classes:
H01L21/304
Domestic Patent References:
JP2008010835A
JP2002029897A
JP2005320237A
JP2002100805A
JP2006128661A
JP9278595A
JP2005243976A
JP2004200240A
JP2001345291A
JP10335750A
Foreign References:
WO2007029655A1
Other References:
Mitsuru Funato, Masaya Ueda, Yoichi Kawakami, Yukio Narukawa, Takao Kosugi, Masayoshi Takahashi and Takashi Mukai,Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates,Japanese Journal of Applied Physics,日本,応用物理学会物理系学術誌刊行センター,2006年 6月30日,Vol. 45, No. 26,L659-L661
Attorney, Agent or Firm:
Shinji Hayami



 
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