Title:
イオンビームを調整する方法、システム、及びプログラム
Document Type and Number:
Japanese Patent JP5285909
Kind Code:
B2
Abstract:
An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.
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| JPH02189850 | ION IMPLANTATION METHOD |
Inventors:
Chang, Shen Woo
Cooketti, Antonella
Jengeleski, Joseph, Pee.
Gibiraro, Gregory, Earl.
Morika, Rosario
Norris, Greg, A.
Olson, Joseph, Sea.
Welsh, Marie, Jay.
Cooketti, Antonella
Jengeleski, Joseph, Pee.
Gibiraro, Gregory, Earl.
Morika, Rosario
Norris, Greg, A.
Olson, Joseph, Sea.
Welsh, Marie, Jay.
Application Number:
JP2007535864A
Publication Date:
September 11, 2013
Filing Date:
October 07, 2005
Export Citation:
Assignee:
Varian Semiconductor Equipment Associates, Inc.
International Classes:
H01J37/317; H01L21/265
Domestic Patent References:
| JP2001143651A | ||||
| JP8250062A | ||||
| JP7169432A | ||||
| JP2000039478A | ||||
| JP2003132835A |
Attorney, Agent or Firm:
Akihiro Ryuka