半導体発光素子およびその製造方法

Japanese Patent JP5310564

B2

A semiconductor light emitting device having high reliability and excellent light distribution characteristics is provided. Specifically, a semiconductor light emitting device 1 is provided with an n-electrode 50, which is arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stack 40 is mounted on a substrate 10. A plurality of convexes are arranged on a first convex region 80 and a second convex region 90 on the light extraction surface. The second convex region 90 adjoins to the interface between the n-electrode 50 and the semiconductor stack 40, between the first convex region 80 and the n-electrode 50. The base end of the first convex arranged in the first convex region 80 is positioned closer to a light emitting layer 42 than the interface between the n-electrode 50 and the semiconductor stack 40, and the base end of the second convex arranged in the second convex region 90 is positioned closer to the interface between the n-electrode 50 and the semiconductor stack 40 than the base end of the first convex.

WO/2009/140285	PHOTOELECTROCHEMICAL ROUGHENING OF P-SIDE-UP GAN-BASED LIGHT EMITTING DIODES
WO/2019/048370	LIGHT-EMITTING SEMICONDUCTOR COMPONENT
JP5518933	Manufacturing method of light emitting diode

Yohei Wakai
Takuaki Matsumura
Kenji Oka

JP2009548110A

October 09, 2013

December 26, 2008

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Nichia Corporation

H01L33/22; H01L33/20; H01L33/38; H01L33/36; H01L33/44

JP2005116615A	2005-04-28
JPH06334218A	1994-12-02
JPS6254485A	1987-03-10
JP2006245542A	2006-09-14
JPH10200162A	1998-07-31
JP2004119839A	2004-04-15
JP2004356279A	2004-12-16
JPH1154769A	1999-02-26
JP2005116615A	2005-04-28
JPH06334218A	1994-12-02
JPS6254485A	1987-03-10
JP2006245542A	2006-09-14
JPH10200162A	1998-07-31
JP2004119839A	2004-04-15
JP2004356279A	2004-12-16
JPH1154769A	1999-02-26

Isono Dozo
Etsuo Tada

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