Title:
半導体レーザ、レーザ光の発生方法、およびレーザ光のスペクトル線幅の狭窄化方法
Document Type and Number:
Japanese Patent JP5356088
Kind Code:
B2
Abstract:
A semiconductor laser is provided capable of generating very narrow laser beams and having stable characteristics, a method for generating the laser beams and a method for reducing a spectral line-width of the laser beams. The semiconductor laser includes a semiconductor active layer, a photonic crystal optical waveguide forming a periodic structure of two-dimensional refractive index within a plane perpendicular to a semiconductor laminate direction directly or indirectly connected to the semiconductor active layer; and an optical cavity that contains the semiconductor active layer and the photonic crystal optical waveguide and oscillates light that is generated from the semiconductor active layer and is guided through the photonic crystal optical waveguide as laser.
Inventors:
Hideaki Hasegawa
Application Number:
JP2009079664A
Publication Date:
December 04, 2013
Filing Date:
March 27, 2009
Export Citation:
Assignee:
THE FURUKAW ELECTRIC CO.,LTD.
International Classes:
H01S5/11; H01S5/026; H01S5/125
Domestic Patent References:
| JP2007294789A | ||||
| JP2004253811A | ||||
| JP2005064471A | ||||
| JP2003124563A | ||||
| JP2008514926A | ||||
| JP2007129028A |
Foreign References:
| WO2008035733A1 |
Other References:
Thomas D. Happ et al.,"Photonic crystal tapers for ultracompact mode conversion",OPTICS LETTERS,2001年 7月15日,Vol.26, No.14,pp.1102-1104
WATANABE H., BABA T.,Active/passive-integrated photonic crystal slab μ-laser,Electronics Letters,2006年 6月 8日,Vol.42, No.12,pp.695-696
WATANABE H., BABA T.,Active/passive-integrated photonic crystal slab μ-laser,Electronics Letters,2006年 6月 8日,Vol.42, No.12,pp.695-696
Attorney, Agent or Firm:
Hiroaki Sakai
Tashiro Toshio
Tashiro Toshio