Title:
高温ストレスによる読み出しマージンの減少を補正するためのフラッシュメモリ装置及びそれの読み出し電圧調整方法
Document Type and Number:
Japanese Patent JP5378711
Kind Code:
B2
Abstract:
A flash memory device includes a cell array and a read voltage adjuster. The cell array includes a first field having first memory cells and a second field having second memory cells. The read voltage adjuster determines a read voltage for reading first data from the first memory cells of the first field with reference to second data read from the memory cells of the second field.
Inventors:
Guang Dong
Application Number:
JP2008159396A
Publication Date:
December 25, 2013
Filing Date:
June 18, 2008
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
G11C16/06; G11C16/02
Domestic Patent References:
| JP2006114078A | ||||
| JP2007157214A | ||||
| JP2008165955A | ||||
| JP2007193933A | ||||
| JP2008097705A |
Attorney, Agent or Firm:
Makoto Hagiwara