Title:
ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びこれを用いたパターン形成方法
Document Type and Number:
Japanese Patent JP5399347
Kind Code:
B2
Abstract:
There is disclosed a thermosetting silicon-containing film-forming composition for forming a silicon-containing film to be formed in a multi-layer resist process used in lithography, wherein the composition comprises at least:(A) a silicon-containing compound obtained by hydrolysis-condensation of a hydrolyzable silicon compound and compound(s) selected from the group consisting of a hydrolyzable silicon compound and a reactive compound; (B) a thermal crosslinking accelerator; (C) an organic acid with one, or two or more valency having 1 to 30 carbon atoms; and (D) an organic solvent. There can be provided a thermosetting silicon-containing film-forming composition, wherein, in a multi-layer resist process used in lithography, the composition is capable of forming an excellent pattern with suppressed reflection even under a high NA exposure condition upon formation of a resist pattern subsequently after formation of a photoresist film onto a silicon-containing film formed on an organic film, capable of forming a silicon-containing film usable as an excellent dry etching mask between the photoresist film that is an upperlayer film of the silicon-containing film and the organic film that is an underlayer film thereof, and excellent in etching selectivity to the upperlayer photoresist.
Inventors:
Tsutomu Ogiwara
Takashi Ueda
Toshiharu Yano
Koji Hasegawa
Takashi Ueda
Toshiharu Yano
Koji Hasegawa
Application Number:
JP2010195379A
Publication Date:
January 29, 2014
Filing Date:
September 01, 2010
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
G03F7/075; G03F7/11; G03F7/26; H01L21/027
Attorney, Agent or Firm:
Good Miya Mikio