Title:
パラメトリックリセットを用いる、低いリセットノイズを有し、低い暗電流を生成するCMOSイメージセンサーのための3Tピクセル
Document Type and Number:
Japanese Patent JP5480186
Kind Code:
B2
Abstract:
The present invention describes in detail the solid-state image sensor, specifically the image sensors pixel that has three transistors, high sensitivity, low reset noise, and low dark current. Low reset noise is achieved by parametrically changing the voltage dependent capacitance of the charge detection node in such a manner that during reset the charge detection node capacitance is low while during sensing and integration cycles the charge detection node capacitance is high. This feature thus results in high dynamic range, which is important for sensors using very small pixels. The low dark current generation is achieved by quenching the interface states by placing a p+ implant near the silicon-silicon dioxide interface.
Inventors:
Yaroslav Heynesek
Application Number:
JP2011068058A
Publication Date:
April 23, 2014
Filing Date:
March 25, 2011
Export Citation:
Assignee:
Intellectual Ventures ii Limited Liability Company
International Classes:
H04N5/357; H01L27/146; H04N5/363; H04N5/374
Domestic Patent References:
| JP2000165755A | ||||
| JP2004312039A | ||||
| JP2001251555A | ||||
| JP2003032554A | ||||
| JP11214738A | ||||
| JP2006148284A | ||||
| JP2000165754A | ||||
| JP2001320630A | ||||
| JP61046680A | ||||
| JP2005101442A |
Attorney, Agent or Firm:
Shoichi Okuyama
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura