Title:
プラズマエッチング方法
Document Type and Number:
Japanese Patent JP5494475
Kind Code:
B2
Abstract:
A plasma etching method includes etching an etching target under plasma conditions using a process gas, the process gas including a saturated fluorohydrocarbon shown by the formula (1): CxHyFz, wherein x is 3, 4, or 5, and y and z are individually positive integers, provided that y>z is satisfied. When etching a silicon nitride film that covers a silicon oxide film formed on the etching target, the silicon nitride film can be selectivity etched as compared with the silicon oxide film by utilizing the process gas including the specific fluorohydrocarbon under the plasma conditions.
Inventors:
Takefumi Suzuki
Ito Azumi
Ito Azumi
Application Number:
JP2010505821A
Publication Date:
May 14, 2014
Filing Date:
March 27, 2009
Export Citation:
Assignee:
Zeon Corporation
International Classes:
H01L21/3065
Domestic Patent References:
| JP2001250817A | 2001-09-14 | |||
| JP2006514783A | 2006-05-11 |
Attorney, Agent or Firm:
Haruhito Oishi