Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5569253
Kind Code:
B2
Abstract:
A semiconductor device production method includes: forming a gate insulating film on the p-type region of a semiconductor substrate; forming a first aluminum oxide film with an oxygen content lower than stoichiometric composition on the gate insulating film; forming a tantalum-nitrogen-containing film that contains tantalum and nitrogen on the first aluminum oxide film; forming an electrically conductive film on the tantalum-nitrogen-containing film; patterning the electrically conductive film to form a gate electrode; injecting n-type impurities into the p-type region using the gate electrode as a mask; and carrying out heat treatment after the formation of the tantalum-nitrogen-containing film.
Inventors:
Haneda Masa -- rare
Application Number:
JP2010187244A
Publication Date:
August 13, 2014
Filing Date:
August 24, 2010
Export Citation:
Assignee:
FUJITSU semiconductor incorporated company
International Classes:
H01L29/78; H01L21/336; H01L21/8238; H01L27/092
Attorney, Agent or Firm:
Takahashi Takashi 4 郎
Mikio Kiyama
Mikio Kiyama