Title:
フラッシュメモリ装置及びそのプログラム方法
Document Type and Number:
Japanese Patent JP5584595
Kind Code:
B2
Abstract:
A flash memory device includes a memory cell array made up of memory cells arranged in rows and columns. A first page of data is programmed in selected memory cells of the memory cell array, and a second page of data is subsequently programmed in the selected memory cells. The first page of data is programmed using a program voltage having a first start value, and the second page of data is programmed using a program voltage having a second start value determined by a programming characteristic of the selected memory cells.
Inventors:
Gold 武 Star
李 漢 Jun
李 漢 Jun
Application Number:
JP2010255099A
Publication Date:
September 03, 2014
Filing Date:
November 15, 2010
Export Citation:
Assignee:
Samsung Electronics Samsung Electronics Co, Inc.., Ltd.
International Classes:
G11C16/02; G11C16/04
Attorney, Agent or Firm:
Makoto Hagiwara