To provide a GaAs hall element having a small variation of offset voltage.

A magnetism sensing section 22 consisting of n-GaAs layer is placed in between a first and a second insulating layer 23a, 23b consisting of AlGaAs which has greater band gap than the n-GaAs layer 22, and the carrier concentration of the n-GaAs layer 22 is kept at not less than 5×1016/cm3and not more than 1×1018/cm3. The movement of electrons from the lower part of the n-GaAs layer 22 to the side surface, and the effect of electron trap on the side surface are then controlled.

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