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Title:
絶縁膜材料を用いた成膜方法および絶縁膜
Document Type and Number:
Japanese Patent JP5614589
Kind Code:
B2
Abstract:
An insulating film material for plasma CVD of the present invention is constituted of a silicon compound including two hydrocarbon groups bonded to each other to form a ring structure together with a silicon atom, or at least one branched hydrocarbon group, wherein within the branched hydrocarbon group, α-carbon that is a carbon atom bonded to the silicon atom constitutes a methylene group, and β-carbon that is a carbon atom bonded to the methylene group or γ-carbon that is a carbon atom bonded to the β-carbon is a branching point.

Inventors:
田島 暢夫
永野 修次
稲石 美明
清水 秀治
大橋 芳
加田 武史
松本 茂樹
徐 永華
Application Number:
JP2010549413A
Publication Date:
October 29, 2014
Filing Date:
February 05, 2010
Export Citation:
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Assignee:
独立行政法人物質・材料研究機構
大陽日酸株式会社
株式会社トリケミカル研究所
International Classes:
H01L21/316; C23C16/42; H01L21/768; H01L23/522
Domestic Patent References:
JP2007523484A2007-08-16
JPH04152553A1992-05-26
JP2006519496A2006-08-24
JP2009026866A2009-02-05
JP2009176898A2009-08-06
JP2010062218A2010-03-18
JP2006516302A2006-06-29
JP2007254651A2007-10-04
Attorney, Agent or Firm:
Masatake Shiga
Norio Takahashi
Takashi Watanabe
Mitsuyoshi Suzuki
West Kazuya
Yasuhiko Murayama



 
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