薄膜トランジスタ製造装置 - 三星ディスプレイ株式會社ＳａｍｓｕｎｇＤｉｓｐｌａｙＣｏ．，Ｌｔｄ．

Title:

薄膜トランジスタ製造装置

Document Type and Number:

Japanese Patent JP5629154

Kind Code:

B2

Abstract:

In an apparatus for fabricating a thin film transistor, amorphous silicon is deposited on a substrate in a first multi-chamber and is crystallized into polycrystalline silicon without using a separate process chamber or multi-chamber, and the substrate deposited with the amorphous silicon is loaded into a second multi-chamber for forming electrodes, thereby making it possible to minimize a characteristic deviation and improve fabrication process efficiency. The apparatus includes a first multi-chamber in which amorphous silicon is deposited on a substrate, a second multi-chamber in which electrodes are formed on the substrate, and a loading/unloading chamber interposed between the first multi-chamber and the second multi-chamber. The loading/unloading chamber includes a substrate holder on a lower side thereof and a power voltage supplier on an upper side thereof.

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Inventors:

金秉胄
安志洙
劉 ▲チョル▼浩
金聖哲

Application Number:

JP2010171837A

Publication Date:

November 19, 2014

Filing Date:

July 30, 2010

Export Citation:

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Assignee:

三星ディスプレイ株式會社ＳａｍｓｕｎｇＤｉｓｐｌａｙＣｏ．，Ｌｔｄ．

International Classes:

H01L21/02; H01L21/20; H01L21/336; H01L29/786

Attorney, Agent or Firm:

Eye Py Dee international patent business corporation

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