Title:
ＩＩＩ族窒化物半導体発光素子の製造方法
Document Type and Number:
Japanese Patent JP5630384
Kind Code:
B2
Abstract:
Sample A is produced by sequentially forming a first insulating film of SiO2 and a reflective film on a sapphire substrate. Sample B is produced by sequentially forming a first insulating film of SiO2, a reflective film, and a second insulating film of SiO2 on a sapphire substrate. In both samples A and B, the reflectance of the reflective film was measured at a wavelength of 450 nm before and after heat treatment. Heat treatment was performed at 600° C. for three minutes. As shown in FIG. 1, in Al/Ag/Al where Al has a thickness of 1 Å to 30 Å, Ag/Al where Al has a thickness of 20 Å, and Al/Ag/Al/Ag/Al where Al has a thickness of 20 Å, the reflectance was 95% or more, which is equivalent to or higher than that of Ag even after the heat treatment.
More Like This:
| WO/2021/064005 | POLARISED EMISSION FROM QUANTUM WIRES IN CUBIC GaN |
| JP6148756 | Opto-electronics semiconductor chip |
| WO/2023/038457 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME |
Inventors:
戸谷 真悟
出口 将士
守山 実希
出口 将士
守山 実希
Application Number:
JP2011126840A
Publication Date:
November 26, 2014
Filing Date:
June 07, 2011
Export Citation:
Assignee:
豊田合成株式会社
International Classes:
H01L33/32
Attorney, Agent or Firm:
Osamu Fujitani