Title:
半導体装置
Document Type and Number:
Japanese Patent JP5651458
Kind Code:
B2
Abstract:
A first transistor including a channel formation region, a first gate insulating layer, a first gate electrode, and a first source electrode and a first drain electrode; a second transistor including an oxide semiconductor layer, a second source electrode and a second drain electrode, a second gate insulating layer, and a second gate electrode; and a capacitor including one of the second source electrode and the second drain electrode, the second gate insulating layer, and an electrode provided to overlap with one of the second source electrode and the second drain electrode over the second gate insulating layer are provided. The first gate electrode and one of the second source electrode and the second drain electrode are electrically connected to each other.
Inventors:
山崎 舜平
小山 潤
加藤 清
小山 潤
加藤 清
Application Number:
JP2010280166A
Publication Date:
January 14, 2015
Filing Date:
December 16, 2010
Export Citation:
Assignee:
株式会社半導体エネルギー研究所
International Classes:
H01L21/8242; H01L21/336; H01L21/8247; H01L27/108; H01L27/115; H01L29/786; H01L29/788; H01L29/792
Previous Patent: 半導体記憶装置
Next Patent: 4,5-DIAMINO-2-HYDROXYPYRIMIDINE-6-CARBONITRILE AND ITS PREPARATION
Next Patent: 4,5-DIAMINO-2-HYDROXYPYRIMIDINE-6-CARBONITRILE AND ITS PREPARATION