Title:
絶縁膜及びそれを用いた有機薄膜トランジスタ
Document Type and Number:
Japanese Patent JP5664828
Kind Code:
B2
Abstract:
Provided is an insulating film cured by an active energy ray, which enables the formation of an organic transistor that has high field effect mobility, high ON/OFF ratio and practically excellent performance, while being normally-off and suppressed in changes of the threshold voltage (Vth). By using an active energy ray-polymerizable silsesquioxane compound in combination with a compound that contains a specific active energy ray-polymerizable double bond, and forming a thin film having a water contact angle of 85-115° by active energy ray polymerization using these compounds, the thus-formed thin film can have excellent field effect mobility and ON/OFF ratio for a gate insulating film for organic thin film transistors in addition to excellent thin film insulation properties and excellent solvent resistance. This thin film enables the formation of a highly practical transistor that is normally-off and suppressed in changes of the threshold voltage (Vth), while having excellent characteristic stability.
Inventors:
高武 正義
大塚 俊一
大塚 俊一
Application Number:
JP2014521432A
Publication Date:
February 04, 2015
Filing Date:
June 14, 2013
Export Citation:
Assignee:
ＤＩＣ株式会社
International Classes:
H01L29/786; C09D11/00; H01L21/312; H01L21/336; H01L51/05; H01L51/30
Domestic Patent References:
| JP2006253510A | 2006-09-21 | |||
| JP2008214454A | 2008-09-18 | |||
| JP2011247925A | 2011-12-08 | |||
| JP2012009796A | 2012-01-12 | |||
| JP2009049397A | 2009-03-05 | |||
| JP2009545883A | 2009-12-24 | |||
| JP2006253510A | 2006-09-21 | |||
| JP2008214454A | 2008-09-18 | |||
| JP2011247925A | 2011-12-08 | |||
| JP2012009796A | 2012-01-12 | |||
| JP2009049397A | 2009-03-05 | |||
| JP2009545883A | 2009-12-24 |
Attorney, Agent or Firm:
Michihiro Kono