Title:
半導体装置および半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5665599
Kind Code:
B2
Abstract:
A manufacturing method of a semiconductor device according to embodiments includes forming a photodiode layer, which is an active region including a photodiode, on a main surface of a first substrate, forming a wiring layer, which includes a wire and a dielectric layer covering the wire, on the photodiode layer, and forming a dielectric film on the wiring layer. The manufacturing method of the semiconductor device according to the embodiments further includes bonding a second substrate to the dielectric film of the first substrate so that a crystal orientation of the photodiode layer matches a crystal orientation of the second substrate.
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Inventors:
本郷 悟史
谷田 一真
堀 哲浩
高橋 健司
沼田 英夫
谷田 一真
堀 哲浩
高橋 健司
沼田 英夫
Application Number:
JP2011038439A
Publication Date:
February 04, 2015
Filing Date:
February 24, 2011
Export Citation:
Assignee:
株式会社東芝
International Classes:
H01L27/146; H01L21/02; H01L27/12; H04N5/376
Attorney, Agent or Firm:
Hiroaki Sakai
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