Title:
電界効果トランジスタ、中間体
Document Type and Number:
Japanese Patent JP5678129
Kind Code:
B2
Abstract:
An organic field-effect transistor normally includes: a source electrode and a drain electrode; an organic semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer adjacent to the organic semiconductor layer; and a gate electrode in contact with the gate insulating layer. The gate insulating layer according to the present invention is in a liquid state, constituted with a material containing no glue or thickener, a sole or main component of which is an ionic liquid. Thus the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher. As a result, an organic field-effect transistor capable of operating at low voltage and assuring ample current gain and high-speed response (the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher) is provided.
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Inventors:
竹谷 純一
小野 新平
関 志朗
小野 新平
関 志朗
Application Number:
JP2013122140A
Publication Date:
February 25, 2015
Filing Date:
June 10, 2013
Export Citation:
Assignee:
独立行政法人科学技術振興機構
一般財団法人電力中央研究所
一般財団法人電力中央研究所
International Classes:
H01L29/786; H01L21/336; H01L51/05; H01L51/30
Attorney, Agent or Firm:
Fuyuki Nagai
Takao Watanabe
Takao Watanabe