Title:
化合物半導体ＥＳＤ保護装置
Document Type and Number:
Japanese Patent JP5684850
Kind Code:
B2
Abstract:
The present invention relates to compound semiconductor ESD protection devices of three types. The device comprises a multi-gate enhancement mode PET (E-PET). For the type I compound semiconductor ESD protection device, the source electrode is connected to the plural gate electrodes through at least one first resistor, and the drain electrode is connected to the plural gate electrodes through at least one second resistor. For the type II compound semiconductor ESD protection device, at least one of the plural gate electrodes are connected to at least one of the inter-gate regions between two adjacent gate electrodes through at least one fourth resistor. For the type compound semiconductor ESD protection device, the plural gate electrodes are connected to the source or drain electrodes through at least one seventh resistor. Any two gate electrodes in the three types of compound semiconductor ESD protection devices can be connected by a resistor.
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Inventors:
高谷 信一郎
チャン ジョン−タオ
ワン チ−ウェイ
ユアン チェン−グァン
リュウ シー−ミン ジョセフ
チャン ジョン−タオ
ワン チ−ウェイ
ユアン チェン−グァン
リュウ シー−ミン ジョセフ
Application Number:
JP2013096857A
Publication Date:
March 18, 2015
Filing Date:
May 02, 2013
Export Citation:
Assignee:
ウィン セミコンダクターズ コーポレーション
International Classes:
H01L21/337; H01L21/338; H01L21/822; H01L27/04; H01L27/095; H01L29/47; H01L29/778; H01L29/808; H01L29/812; H01L29/872
Attorney, Agent or Firm:
Tomoji Murakami