Title:
透明電極及びこれを含む電子材料
Document Type and Number:
Japanese Patent JP5694427
Kind Code:
B2
Abstract:
A transparent electrode includes: a substrate, a first electrode layer formed on the substrate, and a graphene oxide layer formed on and/or under the first electrode layer, and an electronic material for same. The transparent electrode includes graphene oxide layers on and under a conductor and/or a semiconductor to maintain a resistance measured on a surface of a graphene oxide layer in a transparent electrode including the graphene oxide layer almost equal to a resistance of a conductor and/or a semiconductor while showing characteristics of an insulator between conductors or semiconductors or between a conductor and a semiconductor which are separated from each other. Further, the graphene oxide layer performs a role of a barrier layer to protect the transparent electrode, thus preventing deterioration of characteristics of the transparent electrode and improving long-term reliability and transmittance.
Inventors:
Kim Eun Chung
Kim ze il
Ho Kang Hong
Kim ze il
Ho Kang Hong
Application Number:
JP2013100022A
Publication Date:
April 01, 2015
Filing Date:
May 10, 2013
Export Citation:
Assignee:
Samsung Electro-Mechanics Co., Ltd.
International Classes:
H01B5/14; C01B31/02; G02F1/1343; H01L31/0224; H01L33/42; H01M4/02
Domestic Patent References:
| JP2003109434A |
Foreign References:
| KR1020120008902A |
Other References:
Kim, Jin Ho; Jung, Jae Mok; Kwak, Jun Young; Hong, Seung-Soo; Gal, Yeong-Soon; Lim, Kwon Taek,Low-Temperature Processing Method of Preparing for Transparent Graphene Oxide Electrode Film with Better Electrical Properties,Journal of Nanoscience and Nanotechnology,2012年 5月 1日,Vol.12, No.5,pp.4294-4298
Attorney, Agent or Firm:
Konobu Kato
Fukukawa Shinya
Fukukawa Shinya