Title:
イオン注入方法及びイオン注入装置
Document Type and Number:
Japanese Patent JP5701201
Kind Code:
B2
Abstract:
An ion implantation method includes transporting ions to a wafer as an ion beam, causing the wafer to undergo wafer mechanical slow scanning and also causing the ion beam to undergo beam fast scanning or causing the wafer to undergo wafer mechanical fast scanning in a direction perpendicular to a wafer slow scanning direction, irradiating the wafer with the ion beam by using the wafer slow scanning in the wafer slow scanning direction and the beam fast scanning of the ion beam or the wafer fast scanning of the wafer in the direction perpendicular to the wafer slow scanning direction, measuring a two-dimensional beam shape of the ion beam before ion implantation into the wafer, and defining an implantation and irradiation region of the ion beam by using the measured two-dimensional beam shape to thereby regulate the implantation and irradiation region.
Inventors:
Shiro Ninomiya
Taiji Okamoto
Ishikawa Masaki
Kurose Takeshi
Akihiro Ochi
Taiji Okamoto
Ishikawa Masaki
Kurose Takeshi
Akihiro Ochi
Application Number:
JP2011277427A
Publication Date:
April 15, 2015
Filing Date:
December 19, 2011
Export Citation:
Assignee:
Sen corporation
International Classes:
H01J37/317; H01L21/265
Domestic Patent References:
| JP2005203771A | ||||
| JP2009038031A | ||||
| JP2008519417A |
Other References:
S. Ninomiya et al,Productivity Improvement for the SHX-SEN's Single-Wafer High-Current Ion Implanter,Ion Implantation Technology 2010,米国,American Institute of Physics,2010年,341-344
Attorney, Agent or Firm:
Kenho Ikeda
Shuichi Fukuda
Takashi Sasaki
Shuichi Fukuda
Takashi Sasaki