Title:
半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP5707770
Kind Code:
B2
Abstract:
There are provided a high-quality semiconductor device having stable characteristics and a method for manufacturing such a semiconductor device. The semiconductor device includes: a substrate (1) having a main surface; and a silicon carbide layer (2-5) formed on the main surface of the substrate (1) and including a side surface inclined relative to the main surface. The side surface substantially includes a {03-3-8} plane. The side surface includes a channel region.
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Inventors:
Takeyoshi Masuda
Makoto Harada
Honaga Misako
Keiji Wada
Toru Hiyoshi
Makoto Harada
Honaga Misako
Keiji Wada
Toru Hiyoshi
Application Number:
JP2010174663A
Publication Date:
April 30, 2015
Filing Date:
August 03, 2010
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01L29/12; H01L21/336; H01L29/06; H01L29/78; H01L29/861; H01L29/868
Domestic Patent References:
| JP9199724A | ||||
| JP2007165657A | ||||
| JP2002359378A | ||||
| JP2003100657A | ||||
| JP2005340685A | ||||
| JP2007149745A | ||||
| JP2004079955A | ||||
| JP2002261275A |
Other References:
S. TAKENAMI et al.,Sloped Sidewalls in 4H-SiC Mesa Structure Formed by a Cl2-O2 Thermal Etching,Materials Science Forum,2007年,Vol. 556-557, p.733-736
Attorney, Agent or Firm:
Fukami patent office