Title:
半導体ウエハ
Document Type and Number:
Japanese Patent JP5709175
Kind Code:
B2
Abstract:
Provided is a copper anode or a phosphorous-containing copper anode for use in performing electroplating copper on a semiconductor wafer, wherein purity of the copper anode or the phosphorous-containing copper anode excluding phosphorous is 99.99wt% or higher, and silicon as an impurity is 10wtppm or less. Additionally provided is an electroplating copper method capable of effectively preventing the adhesion of particles on a plating object, particularly onto a semiconductor wafer during electroplating copper, a phosphorous-containing copper anode for use in such electroplating copper, and a semiconductor wafer comprising a copper layer with low particle adhesion formed by the foregoing copper electroplating.
Inventors:
Reihiro Market
Yuji Takahashi
Yuji Takahashi
Application Number:
JP2012127804A
Publication Date:
April 30, 2015
Filing Date:
June 05, 2012
Export Citation:
Assignee:
jx Nippon Mining & Metals Co., Ltd.
International Classes:
C25D17/10
Domestic Patent References:
| JP2003171797A | ||||
| JP2003231995A | ||||
| JP2001240949A | ||||
| JP2002275698A |
Attorney, Agent or Firm:
Isamu Ogoshi