Title:
半導体装置の作製方法
Document Type and Number:
Japanese Patent JP5727818
Kind Code:
B2
Abstract:
It is an object to provide a highly reliable semiconductor device, a semiconductor device with low power consumption, a semiconductor device with high productivity, and a method for manufacturing such a semiconductor device. Impurities left remaining in an oxide semiconductor layer are removed without generating oxygen deficiency, and the oxide semiconductor layer is purified to have an extremely high purity. Specifically, after oxygen is added to the oxide semiconductor layer, heat treatment is performed on the oxide semiconductor layer to remove the impurities. In order to add oxygen, it is preferable to use a method in which oxygen having high energy is added by an ion implantation method, an ion doping method, or the like.
Inventors:
Shunpei Yamazaki
Hiroki Ohara
Hiroki Ohara
Application Number:
JP2011037860A
Publication Date:
June 03, 2015
Filing Date:
February 24, 2011
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/265; H01L21/336; H01L21/425
Domestic Patent References:
| JP2010021520A | ||||
| JP2009290113A |
Foreign References:
| US20090142887 |