Title:
多結晶シリコンインゴット製造装置、多結晶シリコンインゴットの製造方法及び多結晶シリコンインゴット
Document Type and Number:
Japanese Patent JP5740111
Kind Code:
B2
Abstract:
A polycrystalline silicon ingot manufacturing apparatus, a polycrystalline silicon ingot manufacturing method, and a polycrystalline silicon ingot are provided. The apparatus comprises: a crucible having a rectangular shape in a cross-section; an upper heater provided above the crucible; and a lower heater provided below the crucible. A silicon melt stored in the crucible is solidified from a bottom surface of the crucible upward unidirectionally. The apparatus further comprises an auxiliary heater that heats at least a bottom-surface-side portion of a sidewall of the crucible. The production yield can be improved by using the apparatus and by reducing the oxygen concentration at the location where the oxygen concentration tends to be high locally at the bottom part of the ingot.
Inventors:
Koji Tsuhashi
Saburo Wakita
Hiroshi Ikeda
Masahiro Kanai
Saburo Wakita
Hiroshi Ikeda
Masahiro Kanai
Application Number:
JP2010164774A
Publication Date:
June 24, 2015
Filing Date:
July 22, 2010
Export Citation:
Assignee:
Mitsubishi Materials Corporation
Mitsubishi Materials Electronic Chemicals Co., Ltd.
Mitsubishi Materials Electronic Chemicals Co., Ltd.
International Classes:
C01B33/02; C30B28/06; C30B29/06; H01L31/04
Domestic Patent References:
| JP2007284343A | ||||
| JP2003137526A | ||||
| JP2003137525A | ||||
| JP2009523694A |
Foreign References:
| WO2009014957A2 | ||||
| WO2009014963A1 |
Attorney, Agent or Firm:
Masatake Shiga
Tadashi Takahashi
Yasuhiko Murayama
Tadashi Takahashi
Yasuhiko Murayama