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Patent Searching and Data


Title:
CZTS系薄膜太陽電池の製造方法
Document Type and Number:
Japanese Patent JP5745342
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing method of a CZTS thin film solar cell having high photoelectric conversion efficiency.SOLUTION: A CZTS thin film solar cell manufacturing method comprises the steps of: forming a metal back electrode layer (2) on a substrate (1); forming a metal precursor film (30) containing at least Cu, Sn, Zn on the metal back electrode layer (2); annealing the substrate (1) on which the metal precursor film (30) is formed; forming a p-type CZTS light absorption layer (3) by sulfurizing and/or seleniding the annealed substrate (1); and forming an n-type transparent conductive film (5) on the p-type CZTS light absorption layer (3).

Inventors:
Hiroki Sugimoto
Hiroi Honor
Noriyuki Sakai
Application Number:
JP2011125621A
Publication Date:
July 08, 2015
Filing Date:
June 03, 2011
Export Citation:
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Assignee:
Solar Frontier Co., Ltd.
International Classes:
H01L31/072
Foreign References:
WO2011066256A1
Other References:
Kunihiko Tanaka, et al.,Pre-Annealing of Precursors of Cu2ZnSnS4 Thin Films Prepared by Sol-Gel Sulfurizing Method,Japanese Journal of Applied Physics,2008年,Vol. 47, No. 1,pp. 598-601
Katsuhiko MORIYA, et al.,Characterization of Cu2ZnSnS4 Thin Films Prepared by Photo-Chemical Deposition,Japanese Journal of Applied Physics,2005年,Vol. 44, No. 1B,pp. 715-717
Attorney, Agent or Firm:
Atsushi Aoki
Jun Tsuruta
Tomohiro Minamiyama
Akira Kawai
Koichi Itsubo