Title:
撮像素子
Document Type and Number:
Japanese Patent JP5757614
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an imaging device that can enhance photosensitivity also with respect to a long-wavelength light and can be formed at a low cost through a simplified process.SOLUTION: The imaging device 1 photoelectrically converts a light entering a depleted region that is formed at a joint between a p-type silicon semiconductor substrate 2 and an n-type silicon semiconductor 3. In the imaging device, the plurality of n-type silicon semiconductors 3 are formed, in the p-type silicon semiconductor substrate 2, by being extended and arranged along the surface direction of the p-type silicon semiconductor substrate 2 and the length-wise direction along the incident direction of the light. In addition, the plurality of n-type silicon semiconductor 3 are provided according to a position and a length corresponding to the entrance length of the incident light, so that the light having a color that corresponds to the infiltration length can be converted photoelectrically and individually.
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Inventors:
Tetsuya Ariyoshi
Yutaka Arima
Yutaka Arima
Application Number:
JP2011044671A
Publication Date:
July 29, 2015
Filing Date:
March 02, 2011
Export Citation:
Assignee:
Kyushu Institute of Technology
International Classes:
H01L27/146; H01L27/144; H01L31/10; H04N5/33; H04N5/369; H04N9/07
Domestic Patent References:
| JP2002033504A | ||||
| JP2009212109A | ||||
| JP9275223A | ||||
| JP2003304544A | ||||
| JP2002077524A | ||||
| JP2007165696A |
Attorney, Agent or Firm:
Yasuo Hirai