Title:
磁気ランダム・アクセス・メモリ（ＭＲＡＭ）装置及びＭＲＡＭ装置を製造する方法
Document Type and Number:
Japanese Patent JP5759541
Kind Code:
B2
Abstract:
A magnetic random access memory (MRAM) device has read word lines, write word lines, bit lines, and a plurality of memory bit cells interconnected via the read word lines, the write word lines and the bit lines. Each memory bit cell has a fixed ferromagnetic layer element and a free ferromagnetic layer element separated by a dielectric tunnel barrier element. Each write word line and a respective number of free ferromagnetic layer elements are formed as a single continuous ferromagnetic line.
Inventors:
Allenspach, Rolf
Ginoni, curl
Ginoni, curl
Application Number:
JP2013517602A
Publication Date:
August 05, 2015
Filing Date:
June 08, 2011
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION
International Classes:
H01L21/8246; G11C11/15; H01L27/105; H01L43/08
Domestic Patent References:
| JP2005086203A | ||||
| JP2007005555A |
Foreign References:
| WO2006115275A1 |
Attorney, Agent or Firm:
Takeshi Ueno
Tasaichi Tanae
Yoshihiro City
Tasaichi Tanae
Yoshihiro City