磁気抵抗素子および磁気メモリ

Japanese Patent JP5761788

B2

A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≰x<64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the second magnetic film including MnyGa100-y (45≰y<64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.

Daibo Tadashi
Junichi Ito
Kai Kai
Amano Minoru
Hiroaki Tadashi
Miyazaki saki Terunobu
Minami Mizukami
Takashi Kubota
Yakushiji Kei
Yuasa Shinji
Hitoshi Kubota
Akio Fukushima
Taro Nagahama
Ando Isao

JP2011068868A

August 12, 2015

March 25, 2011

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Toshiba Corporation
Tohoku University
National Institute of Advanced Industrial Science and Technology

H01L21/8246; H01F10/32; H01L27/105; H01L29/82; H01L43/08; H01L43/10

JP2008010590A
JP2010232499A
JP2009239052A
JP2009239121A
JP2008252037A

WO2010119928A1

Hirohito Katsunuma
Yasukazu Sato
Yasushi Kawasaki
Takeshi Sekine
Akaoka Akira

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