Title:
気相成長装置の汚染評価方法及びシリコンエピタキシャルウェーハの製造方法
Document Type and Number:
Japanese Patent JP5794212
Kind Code:
B2
Inventors:
Yoshida Chisa
Yoshiharu Kato
Yoshiharu Kato
Application Number:
JP2012185311A
Publication Date:
October 14, 2015
Filing Date:
August 24, 2012
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
H01L21/205; C23C16/24; C23C16/52; H01L21/31
Domestic Patent References:
| JP6177222A | ||||
| JP2011258895A |
Foreign References:
| WO2011033752A1 | ||||
| WO2008149806A1 |
Attorney, Agent or Firm:
Mikio Yoshimiya