Title:
半導体装置の作製方法
Document Type and Number:
Japanese Patent JP5798731
Kind Code:
B2
Abstract:
A first embrittlement layer is formed by doping a first single-crystal semiconductor substrate with a first ion; a second embrittlement layer is formed by doping a second single-crystal semiconductor substrate with a second ion; the first and second single-crystal semiconductor substrates are bonded to each other; the first single-crystal semiconductor film is formed over the second single-crystal semiconductor substrate by a first heat treatment; an insulating substrate is bonded over the first single-crystal semiconductor film; and the first and second single-crystal semiconductor films are formed over the insulating substrate by a second heat treatment. A dose of the first ion is higher than that of the second ion and a temperature of the first heat treatment is lower than that of the second heat treatment.
Inventors:
Akihisa Shimomura
Naoki Okuno
Furuyama Masaki
Jimbo Yasuhiro
Naoki Okuno
Furuyama Masaki
Jimbo Yasuhiro
Application Number:
JP2010231053A
Publication Date:
October 21, 2015
Filing Date:
October 14, 2010
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/02; H01L21/20; H01L21/265; H01L21/322; H01L21/336; H01L27/12; H01L29/786
Domestic Patent References:
| JP2001210810A | ||||
| JP2006527480A | ||||
| JP2009094492A | ||||
| JP2010141303A | ||||
| JP2006012995A | ||||
| JP2011530183A |
Foreign References:
| WO2001048825A1 |
Attorney, Agent or Firm:
Satoshi Yoshimoto