Title:
高周波スイッチ
Document Type and Number:
Japanese Patent JP5814547
Kind Code:
B2
Abstract:
There is provided a high frequency switch capable of suppressing deterioration in distortion characteristics. The high frequency switch includes: a common port outputting a transmission signal to an antenna; a plurality of transmission ports each having the transmission signal input thereto; and a plurality of switching units each connected between the plurality of transmission ports and the common port to conduct or block the transmission signal from each of the transmission ports to the common port, wherein each of the switching units has one or more metal oxide semiconductor field effect transistors (MOSFETs) formed on a silicon substrate, and a capacitor connected between a body terminal of a MOSFET connected to the common port among the MOSFETs and a terminal of the MOSFET connected to the common port.
Inventors:
Takeshi Sugiura
Eiichiro Otobe
Yasunori Tanji
Norihisa Kotani
Eiichiro Otobe
Yasunori Tanji
Norihisa Kotani
Application Number:
JP2010283709A
Publication Date:
November 17, 2015
Filing Date:
December 20, 2010
Export Citation:
Assignee:
Samsung Electro-Mechanics Co., Ltd.
International Classes:
H03K17/693
Domestic Patent References:
| JP2011228894A | ||||
| JP2010212801A |
Foreign References:
| WO2008133620A1 |
Attorney, Agent or Firm:
Hatta International Patent Corporation
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