ナノヘテロ構造ｐｎ接合素子およびその製造方法

Title:

ナノヘテロ構造ｐｎ接合素子およびその製造方法

Document Type and Number:

Japanese Patent JP5818082

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To provide a pn-junction element having a nanostructure and excellent in photoelectric conversion efficiency such as light-emitting efficiency.SOLUTION: The nano-heterostructure pn-junction element comprises: a nano-heterostructure body, having a three-dimensional periodic structure in which an average value of a unit length of the repeated structure is 1 to 100nm, and in a matrix composed of one inorganic component out of a p-type semiconductor material and an n-type semiconductor material, the other inorganic component, out of the p-type semiconductor material and the n-type semiconductor material, having a shape selected from a group composed of a columnar shape, a gyroid shaped, and a layer shape, is arranged three-dimensionally and periodically; a p-type semiconductor material; and an n-type semiconductor material. The nano heterostructure body is sandwiched between the p-type semiconductor layer and the n-type semiconductor layer so that an end part of a pn junction surface formed with the p-type semiconductor material and the n-type semiconductor material in the nano-heterostructure body is brought in contact with at least one of surfaces of semiconductor layers out of the p-type semiconductor layer and the n-type semiconductor layer.

Inventors:

Hiroaki Wakayama
Yonekura Hirotaka
Yasuaki Kawai

Application Number:

JP2011202937A

Publication Date:

November 18, 2015

Filing Date:

September 16, 2011

Export Citation:

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