Title:
ｎ型窒化アルミニウム単結晶基板を用いた縦型窒化物半導体デバイス
Document Type and Number:
Japanese Patent JP5818853
Kind Code:
B2
Abstract:
A vertical nitride semiconductor device includes an n-type aluminum nitride single-crystal substrate having an Si content of 3×1017 to 1×1020 cm−3 and a dislocation density of 106 cm−2 or less. An ohmic electrode layer is formed on an N-polarity side of the n-type aluminum nitride single-crystal substrate.
Inventors:
Toru Kinoshita
Toshiyuki Obata
Toru Nagashima
Toshiyuki Obata
Toru Nagashima
Application Number:
JP2013214435A
Publication Date:
November 18, 2015
Filing Date:
October 15, 2013
Export Citation:
Assignee:
Tokuyama Corporation
International Classes:
C30B29/38; H01L21/20; H01L21/203; H01L21/205; H01L29/201; H01L29/47; H01L29/872
Domestic Patent References:
| JP2008013390A | ||||
| JP2009179533A | ||||
| JP2009126722A | ||||
| JP2011097065A |
Foreign References:
| WO2007111219A1 | ||||
| WO2008096884A1 |